低損耗的愛(ài)普生SPXO振蕩器X1G005601036800，愛(ài)普生公司作為日系知名晶振品牌制造商,通過(guò)自身的努力，開(kāi)發(fā)出許多優(yōu)質(zhì)的振蕩器，其中包含這款SG-8018系列是可編程晶體振蕩器系列CMOS輸出。SPXO振蕩器，編碼X1G005601036800，這個(gè)系列提供了頻率和其他參數(shù)的可編程性SG-8002/SG-8003系列，它們也具有更廣泛的工作溫度范圍，最高極限為105°C。除了2.5 × 2.0 mm的封裝，將使電子制造商節(jié)省板空間，該振蕩器也將在以下流行的封裝尺寸:3.2 × 2.5 mm, 5.0 × 3.2 mm和7.0 × 5.0 mm。SG-8018系列振蕩器的頻率容忍度約為66%比同類產(chǎn)品低50%的電流消耗，適用范圍廣環(huán)境條件。這也將大大有助于性能，更低的功率要求，快速開(kāi)發(fā)周期和低量生產(chǎn)。

低損耗的愛(ài)普生SPXO振蕩器X1G005601036800，有源晶振,是指晶體本身起振需要外部電壓供應(yīng),起振后可直接驅(qū)動(dòng)CMOS集成電路,產(chǎn)品本身已實(shí)現(xiàn)與薄型IC(TSSOP封裝,TVSOP封裝)同樣的1mm厚度,斷開(kāi)時(shí)的消費(fèi)電流是15µA以下,編帶包裝方式可對(duì)應(yīng)自動(dòng)搭載及IR回流焊接(無(wú)鉛對(duì)應(yīng))產(chǎn)品有幾種電壓供選1.8V,2.5V,3V3.3V,5V,以應(yīng)對(duì)不同IC產(chǎn)品需要..

Product Number	愛(ài)普生晶振型號(hào)	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005601035000	SG-8018CG	24.519000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601035100	SG-8018CG	32.674000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601035200	SG-8018CG	25.629200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601035300	SG-8018CG	54.229000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601035400	SG-8018CG	22.989500 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601035500	SG-8018CG	66.666600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601035600	SG-8018CG	74.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601035700	SG-8018CG	3.686400 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601035900	SG-8018CG	28.636300 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036000	SG-8018CG	29.491200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036100	SG-8018CG	39.800000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036200	SG-8018CG	27.800000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036300	SG-8018CG	11.289000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601036400	SG-8018CG	24.519000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036500	SG-8018CG	32.674000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036600	SG-8018CG	150.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 8.1 mA
X1G005601036700	SG-8018CG	36.700000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036800	SG-8018CG	40.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601036900	SG-8018CG	7.690000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601037000	SG-8018CG	1.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA

石英晶振蕩器體是一種各向異性晶體。它由以特定方位角切割的薄片制成，然后在晶片的相應(yīng)表面上涂有銀。安裝一對(duì)金屬塊作為極板，構(gòu)成石英晶體振蕩器。石英晶體可用作振蕩電路的原因在于其壓電效應(yīng)。當(dāng)在晶片外部的兩個(gè)板之間添加電場(chǎng)時(shí)，晶體將產(chǎn)生機(jī)械變形; 相反，當(dāng)在板之間施加機(jī)械力時(shí)，將在晶體中產(chǎn)生電場(chǎng)。這種現(xiàn)象稱為壓電效應(yīng)。

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